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| savantic semiconductor product specification silicon npn power transistors 2N6354 description with to-3 package excellent safe operating area fast switching speed low collector saturation voltage high power dissipation applications for switching applications in military and industrial equipment pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 150 v v ceo collector-emitter voltage open base 120 v v ebo emitter-base voltage open collector 6.5 v i c collector current 10 a i cm collector current-peak 12 a i b base current 5 a p d total power dissipation t c =25 140 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.25 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2N6354 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdwon voltage i c =0.2a ;i b =0 120 v v (br)ebo emitter-base breakdwon voltage i e =5m a ;i c =0 6.5 v v cesat-1 collector-emitter saturation voltage i c =5a ;i b =0.5a 0.5 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =1a 1.0 v v be sat-1 base-emitter saturation voltage i c =5a ;i b =0.5a 1.3 v v be sat-2 base-emitter saturation voltage i c =10a; i b =1a 2.0 v i ceo collector cut-off current v ce =100v;v be =0 t c =125 10 ma i cev collector cut-off current v ce =140v; i b =0 10 20 ma i cbo collector cut-off current v cb =150v; i e =0 5 ma i ebo emitter cut-off current v eb =5v; i c =0 5 ma h fe-1 dc current gain i c =5a ; v ce =2v 20 150 h fe-2 dc current gain i c =10a ; v ce =2v 10 100 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 300 pf savantic semiconductor product specification 3 silicon npn power transistors 2N6354 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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